3D DRAM Plus
PORTLAND, OR, July 13, 2020 /24-7PressRelease/ — BeSang Inc., a pioneer in monolithic 3D IC technologies in Portland, Oregon, introduces “3D DRAM Plus,” a next generation 3D DRAM technology which integrates 3D memory cell array along with 3D sense amplifiers without additional process complexity. Unlike previous version of 3D DRAM, it drastically reduces 3D routings, and increases cell efficiency up to 95%. Additionally, it will be much cheaper and easier to integrate in 3D.
“In-situ integration of 3D sense amplifier along with 3D memory cell array elevates BeSang’s 3D DRAM technologies to another level. I expect 3D DRAM Plus will eventually replace planar DRAM products in the memory sector.” states Sang-Yun Lee, CEO of BeSang Inc. “Also, the applications of embedded cache memories will significantly boost CPU/GPU/AP performance while making the embedded cache memories more affordable.”
“3D DRAM Plus” is available through IP licensing from BeSang Inc.
BeSang is a fabless semiconductor company developing high-density and ultra-low cost semiconductor memory products and technologies along with IP development. The BeSang is headquartered in Hillsboro, Oregon, USA. Additional information is available at www.besang.com.
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